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PD- 93897C
SMPS MOSFET
Applications High frequency DC-DC converters
IRF7452
HEXFET(R) Power MOSFET
VDSS
100V
RDS(on) max
0.060
ID
4.5A
Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
A A D D D D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
4.5 3.6 36 2.5 0.02 30 3.5 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Typical SMPS Topologies Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input with Passive Reset Forward Converter Primary
Notes
through
are on page 8
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1
11/23/01
IRF7452
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- 3.0 --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.060 VGS = 10V, ID = 2.7A 5.5 V VDS = VGS, ID = 250A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 24V nA -100 VGS = -24V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 33 7.3 16 9.5 11 16 13 930 300 84 1370 170 280 Max. Units Conditions --- S VDS = 50V, ID = 2.7A 50 ID = 2.7A 11 nC VDS = 80V 24 VGS = 10V, --- VDD = 50V --- ID = 2.7A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
200 4.5 0.25
Units
mJ A mJ
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 77 270 2.3 A 36 1.3 120 410 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.7A, VGS = 0V TJ = 25C, IF = 2.7A di/dt = 100A/s
D
S
2
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IRF7452
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
10
1
1
5.0V
0.1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.01 0.1
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.5A
I D , Drain-to-Source Current (A)
2.0
10
TJ = 150 C
1.5
TJ = 25 C
1
1.0
0.5
0.1 5.0
V DS = 50V 20s PULSE WIDTH 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7452
100000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 2.7A VDS = 80V VDS = 50V VDS = 20V
C ds
16
10000
C, Capacitance (pF)
12
1000
Ciss Coss
8
100
Crss
4
10 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
TJ = 150 C
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7452
5.0
VDS
4.0
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
-VDD
3.0
10V
2.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7452
RDS(on) , Drain-to -Source On Resistance ( )
RDS (on) , Drain-to-Source On Resistance ( )
0.06
0.08
VGS = 10V
0.07
0.05 VGS = 15V
0.06
ID = 2.7A
0.05
0.04 0 4 8 12 16 20 ID , Drain Current (A)
0.04 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
500
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
400
Charge
IG ID
BOTTOM
ID 2.0A 3.6A 4.5A
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
V(BR)DSS tp
VDS L
100
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7452
SO-8 Package Details
D -B-
DIM
5
INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0.10 (.004) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
-CB 8X 0.25 (.010) NOTES: 1. 2. 3. 4. A1 M CASBS
L
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6.46 ( .255 )
1.78 (.070) 8X
1.27 ( .050 ) 3X
SO-8 Part Marking
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IRF7452
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 20mH RG = 25, IAS = 4.5A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/01
8
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